Novel Reconfigurable Field-effect Transistor with Asymmetric Spacer Engineering at Drain Side,IEEE Transactions on Electron Devices, 67(2), 651-657, 2020.

发布时间:2025-09-05浏览次数:10文章来源:华东师范大学通信与电子工程学院

Novel Reconfigurable Field-effect Transistor with Asymmetric Spacer Engineering at Drain Side,IEEE Transactions on Electron Devices, 67(2), 651-657, 2020.

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